Measurement of charge carrier mobility in perovskite nanowire films by photo-celiv method
Résumé
In this paper the holes' mobility for the configuration FTO/TiO2/CH3NH3PbI3/Spiro-MeOTAD/Au was measured for the first time by the Photo-CELIV method. The TiO2 dense film was deposited by reactive sputtering at room temperature on FTO glass substrates. High crystalized perovskite films were deposited from solutions in one step by spin coating. Spiro-MeOTAD molecular glass was used as holes transporting layer. The highest holes' mobility from TiO2 thin film through the perovskite and Spiro MeOTAD film to the top gold electrode was of order 8.5×10-7 cm2/Vs.
Domaines
Physique [physics]| Origine | Accord explicite pour ce dépôt |
|---|