At present, the most popular technique for the localized P-type doping of 4H-SiC is Al ion implantation. The main drawbacks related to ion implantation are the limited activation of the Al as acceptors and the high amount of residual crystal damages, even after annealing at very high temperature [1]. In the last few years, Vapor-Liquid-Solid (VLS) selective epitaxy has been investigated as an alternative solution for the localized p-type doping of 4H-SiC [2]. One interesting result obtained with this new method has been the reduction of the resistivity of ohmic contacts on p-type 4H-SiC, for which specific resistance value as low as 1.3×10-6 Ω.cm 2 after annealing, and ohmicity before contact annealing, have been demonstrated [3]. In the present work, we have optimized the experimental conditions of the VLS epitaxial growth, in order to obtain 4H-SiC P/N junctions. For the VLS process, the liquid phase is an AlSi melt and C 3 H 8 gas is the carbon precursor.