Evaluation of the optoelectronic properties of ZnSnN2 thin films under different growth conditions and doping implantation of As and P at different concentrations - Archive ouverte HAL
Poster De Conférence Année : 2019

Evaluation of the optoelectronic properties of ZnSnN2 thin films under different growth conditions and doping implantation of As and P at different concentrations

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Science des matériaux [cond-mat.mtrl-sci]

Sylvain LE GALL  : Connectez-vous pour contacter le contributeur

https://hal.science/hal-02419004

Soumis le : jeudi 19 décembre 2019-11:35:44

Dernière modification le : mercredi 30 octobre 2024-13:27:48

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Dates et versions

hal-02419004 , version 1 (19-12-2019)

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  • HAL Id : hal-02419004 , version 1

Citer

Leonardo Kopprio, Sylvain Le Gall, Christophe Longeaud, Ngoc Kim Thanh Bui, Boubakeur Ayachi, et al.. Evaluation of the optoelectronic properties of ZnSnN2 thin films under different growth conditions and doping implantation of As and P at different concentrations. JNPV 2019, Dec 2019, Dourdan, France. ⟨hal-02419004⟩

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