Evaluation of the optoelectronic properties of ZnSnN2 thin films under different growth conditions and doping implantation of As and P at different concentrations - Archive ouverte HAL Accéder directement au contenu
Poster De Conférence Année : 2019

Evaluation of the optoelectronic properties of ZnSnN2 thin films under different growth conditions and doping implantation of As and P at different concentrations

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hal-02419004 , version 1 (19-12-2019)

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  • HAL Id : hal-02419004 , version 1

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Leonardo Kopprio, Sylvain Le Gall, Christophe Longeaud, Ngoc Kim Thanh Bui, Boubakeur Ayachi, et al.. Evaluation of the optoelectronic properties of ZnSnN2 thin films under different growth conditions and doping implantation of As and P at different concentrations. JNPV 2019, Dec 2019, Dourdan, France. ⟨hal-02419004⟩
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