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Communication Dans Un Congrès Année : 2019

Graphene and doped-graphene synthesis by Pulse Laser Deposition: a review

F. Bourquard
A.-S. Loir
C. Donnet

Résumé

Graphene is a remarkable two-dimensional (2D) material that is of great interest to both academia and industry. Several methods are used to produce either pristine graphene or doped graphene. Among these methods, Pulse Laser Deposition (PLD) has proved to be an alternative route for producing graphene layers from amorphous carbon thin films, due to many advantages including the controlled film thickness and dopant compositions in the films [1]. The present talk will review the ability of PLD to produce graphene and doped graphene films, mainly with nitrogen or boron atoms [2]. The growth mechanism will be highlighted on the basis of XPS investigations in situ during graphene growth. The film characteristics depending on the synthesis process are discussed mainly on the basis of Raman and XPS/AES investigations. Exploration of some electrical conduction properties are emphasized. In particular, electroanalytical experiments show that functionalized electrodes with nitrogen-doped graphene from PLD exhibits excellent reversibility, close to the theoretical value of 59 mV, and very high sensitivity to hydrogen peroxide oxidation [3]. The electroanalytical results were correlated with the composition and nanoarchitecture of the N-doped graphene film identified as a few-layer defected and textured graphene film containing a balanced mixture of graphitic-N and pyrrolic-N chemical functions. The present talk will help researchers to have an overview of the interest of PLD for graphene and doped-graphene synthesis.
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Dates et versions

hal-02417292 , version 1 (20-12-2019)

Identifiants

  • HAL Id : hal-02417292 , version 1

Citer

Y. Bleu, F. Bourquard, V. Barnier, F. Christien, A.-S. Loir, et al.. Graphene and doped-graphene synthesis by Pulse Laser Deposition: a review. American Advanced Materials Congress, Dec 2019, Orlando, United States. ⟨hal-02417292⟩
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