Dielectric/semiconductor interface in organic field effect transistors (OFETs) is critical in their performances. Modification of this interface with functional molecules provides a wide range of possibilities for their applications as sensors. In this work, boronic acid molecules were used to modify SiO 2 dielectric surface in dinaphtho[2,3-b:2',3'-f]thieno[3,2-b]thiophene (DNTT) based OFETs. The device parameters, notably threshold voltage was significantly improved. Dielectric/semiconductor interface was analyzed by various measurement techniques, such as contact angle and atomic force microscopy. Our work puts in evidence that easily functionable boronic acid derivatives improve the device performances of OFETs, laying foundation for further studies of such interface modified OFETs towards sensing applications.