Structural and electrical properties of AlN thin films on GaN substrates grown by plasma enhanced-Atomic Layer Deposition - Archive ouverte HAL
Journal Articles Materials Science in Semiconductor Processing Year : 2019

Structural and electrical properties of AlN thin films on GaN substrates grown by plasma enhanced-Atomic Layer Deposition

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Physics [physics] Physics [physics]

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https://hal.science/hal-02399341

Submitted on : Monday, December 9, 2019-9:30:08 AM

Last modification on : Friday, March 1, 2024-6:20:03 PM

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hal-02399341 , version 1 (09-12-2019)

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Emanuela Schilirò, Filippo Giannazzo, Corrado Bongiorno, Salvatore Di Franco, Giuseppe Greco, et al.. Structural and electrical properties of AlN thin films on GaN substrates grown by plasma enhanced-Atomic Layer Deposition. Materials Science in Semiconductor Processing, 2019, 97, pp.35-39. ⟨10.1016/j.mssp.2019.03.005⟩. ⟨hal-02399341⟩

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