Buried defects induced by plasma assisted molecular beam epitaxy of AlN and GaN on Silicon - Archive ouverte HAL Access content directly
Journal Articles Journal of Crystal Growth Year : 2019
No file

Dates and versions

hal-02399328 , version 1 (09-12-2019)

Identifiers

Cite

Yvon Cordier, Rémi Comyn, Olivier Tottereau, Eric Frayssinet, Marc Portail, et al.. Buried defects induced by plasma assisted molecular beam epitaxy of AlN and GaN on Silicon. Journal of Crystal Growth, 2019, 507, pp.220-225. ⟨10.1016/j.jcrysgro.2018.11.029⟩. ⟨hal-02399328⟩
22 View
0 Download

Altmetric

Share

Gmail Mastodon Facebook X LinkedIn More