Evolution and prevention of meltback etching: Case study of semipolar GaN growth on patterned silicon substrates - Archive ouverte HAL Access content directly
Journal Articles Journal of Applied Physics Year : 2017
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hal-02391999 , version 1 (03-12-2019)

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Michel Khoury, Olivier Tottereau, Guy Feuillet, Philippe Vennegues, Jesús Zúñiga-Pérez. Evolution and prevention of meltback etching: Case study of semipolar GaN growth on patterned silicon substrates. Journal of Applied Physics, 2017, 122, pp.105108. ⟨10.1063/1.5001914⟩. ⟨hal-02391999⟩
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