Pendeo-epitaxy of GaN on SOI nano-pillars: Freestanding and relaxed GaN platelets on silicon with a reduced dislocation density - Archive ouverte HAL Access content directly
Journal Articles Journal of Crystal Growth Year : 2019

Pendeo-epitaxy of GaN on SOI nano-pillars: Freestanding and relaxed GaN platelets on silicon with a reduced dislocation density

Virginie Brandli
  • Function : Author
Jesus Zuniga Perez

Abstract

Nanopendeo-epitaxy of gallium nitride (GaN) is considered in this study as a way of producing freestanding GaN with reduced strain and threading dislocation density (TDD) for optoelectronic applications. The novelty of this work lies in the use of silicon on insulator (SOI) substrates patterned into nano-pillars down to the buried oxide (BOX). We actually want to benefit from the creeping properties of SiO2 at the growth temperature of GaN for strain relaxation and grain-boundary dislocations reduction. In this paper, we report on the fabrication of 40×40 µm 2 and 300×300 µm 2 freestanding GaN platelets, up to 10 µm-thick, spontaneously separated from the initial pillars. Structural and optical characterizations show that the platelets are crack-free and almost fully relaxed, with a TDD of ∼ 4×10 8 /cm 2. We underline the different benefits of this approach, but most importantly, we believe that it will be the founding-brick for transferable GaN-based devices.
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Dates and versions

hal-02304951 , version 1 (25-11-2020)

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Roy Dagher, Philippe de Mierry, Blandine Alloing, Virginie Brandli, Marc Portail, et al.. Pendeo-epitaxy of GaN on SOI nano-pillars: Freestanding and relaxed GaN platelets on silicon with a reduced dislocation density. Journal of Crystal Growth, 2019, 526, pp.125235. ⟨10.1016/j.jcrysgro.2019.125235⟩. ⟨hal-02304951⟩
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