Magnetic Configurations and State Diagram of Nanoring Magnetic Tunnel Junctions
Résumé
Nonvolatile magnetic random-access memory is one of the most promising memory candidates to meet the requirements of high-density and low-power data storage. Downsize scalability and energy efficiency of conventional memory-unit cells with elliptic shape, however, remain matters of great concern. The development of alternative memory-unit-cell architecture that would potentially enhance the performance of practical devices is thus particularly interesting for applications. Here the magnetic configurations for nanoring magnetic tunnel junctions with an in-plane magnetic storage layer are studied by micromagnetic simulation, revealing that, for an appropriate ring width, the outer diameter can be scaled down to less than 20 nm, where the magnetic onion configuration becomes energetically favored. We also study the spin-transfer-torque switching process and dynamic resistance state diagram with respect to the applied magnetic field and spin-polarized current. A low switching-current density is demonstrated. The results indicate the advantage of using nanoring magnetic tunnel junctions as memory units, which may provide an alternative solution for high-storage-density and low-power-consumption nonvolatile memory.
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