Morphology Tailoring and Growth Mechanism of Indium-Rich InGaN/GaN Axial Nanowire Heterostructures by Plasma-Assisted Molecular Beam Epitaxy - Archive ouverte HAL
Article Dans Une Revue Crystal Growth & Design Année : 2018

Morphology Tailoring and Growth Mechanism of Indium-Rich InGaN/GaN Axial Nanowire Heterostructures by Plasma-Assisted Molecular Beam Epitaxy

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hal-02385645 , version 1 (28-11-2019)

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Martina Morassi, Ludovic Largeau, Fabrice Oehler, Hyun-Gyu Song, Laurent Travers, et al.. Morphology Tailoring and Growth Mechanism of Indium-Rich InGaN/GaN Axial Nanowire Heterostructures by Plasma-Assisted Molecular Beam Epitaxy. Crystal Growth & Design, 2018, 18 (4), pp.2545-2554. ⟨10.1021/acs.cgd.8b00150⟩. ⟨hal-02385645⟩
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