Phase formation during Mn thin film reaction with Ge: Self-aligned germanide process for spintronics - Archive ouverte HAL
Journal Articles Applied Physics Letters Year : 2013

Phase formation during Mn thin film reaction with Ge: Self-aligned germanide process for spintronics

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Materials Science [cond-mat.mtrl-sci]

Alain Portavoce  : Connect in order to contact the contributor

https://amu.hal.science/hal-02385367

Submitted on : Thursday, November 28, 2019-5:30:11 PM

Last modification on : Monday, June 10, 2024-4:58:03 PM

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hal-02385367 , version 1 (28-11-2019)

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O. Abbes, A. Portavoce, V. Le Thanh, C. Girardeaux, L. Michez. Phase formation during Mn thin film reaction with Ge: Self-aligned germanide process for spintronics. Applied Physics Letters, 2013, 103 (17), pp.172405. ⟨10.1063/1.4827100⟩. ⟨hal-02385367⟩

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