Near- to mid- IR antimonide optoelectronic devices epitaxially integrated on on-axis (001) Si substrates - Archive ouverte HAL
Communication Dans Un Congrès Année : 2019

Near- to mid- IR antimonide optoelectronic devices epitaxially integrated on on-axis (001) Si substrates

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hal-02383950 , version 1 (28-11-2019)

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  • HAL Id : hal-02383950 , version 1

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Jean-Baptiste Rodriguez, M. Rio Calvo, Laurent Cerutti, Laura Monge-Bartolomé, M. Bahriz, et al.. Near- to mid- IR antimonide optoelectronic devices epitaxially integrated on on-axis (001) Si substrates. The 9th International Symposium on Photonics and Electronics Convergence, Nov 2019, Tokyo, Japan. ⟨hal-02383950⟩
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