Insights in the atomic arrangement of stacking faults in AgSbTe2 based thermoelectric materials - Archive ouverte HAL
Communication Dans Un Congrès Année : 2019

Insights in the atomic arrangement of stacking faults in AgSbTe2 based thermoelectric materials

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hal-02379745 , version 1 (25-11-2019)

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  • HAL Id : hal-02379745 , version 1

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Lamya Abdellaoui, S. Zhang, S. Zaefferer, R. Bueno-Villoro, B. Gault, et al.. Insights in the atomic arrangement of stacking faults in AgSbTe2 based thermoelectric materials. The 38th International Conference on Thermoelectrics (ICT), Jun 2019, Gyeongju, South Korea. ⟨hal-02379745⟩
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