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Article Dans Une Revue IEEE Transactions on Electron Devices Année : 2019

A Compact Formulation for Avalanche Multiplication in SiGe HBTs at High Injection Levels

Résumé

This paper presents a unified physical formulation for the avalanche effect in silicon-germanium heterojunction bipolar transistors (SiGe HBTs) at different injection levels. Based on an analytical description of the resulting electric-field distribution, a closed-form analytical expression for the multiplication factor is derived and has been implemented in the HICUM compact model. The model accuracy close to and beyond the common-emitter breakdown voltage BV CEO has been assessed over a wide temperature range in comparison to measurements of SiGe HBTs with different collector doping profiles and emitter geometries. Index Terms-Avalanche, compact model, high injection, impact ionization, kirk effect, safe operating area (SOA), silicon-germanium heterojunction bipolar transistors (SiGe HBTs).
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Dates et versions

hal-02379143 , version 1 (25-11-2019)

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Citer

Mathieu Jaoul, Cristell Maneux, Didier Celi, Michael Schröter, Thomas Zimmer. A Compact Formulation for Avalanche Multiplication in SiGe HBTs at High Injection Levels. IEEE Transactions on Electron Devices, 2019, 66 (1), pp.264-270. ⟨10.1109/TED.2018.2875494⟩. ⟨hal-02379143⟩
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