Ge-rich SiGe waveguides for supercontinuum generation in the mid-IR - Archive ouverte HAL
Proceedings/Recueil Des Communications Année : 2018

Ge-rich SiGe waveguides for supercontinuum generation in the mid-IR

Résumé

The third-order nonlinear parameter of Ge-rich SiGe waveguides are experimentally retrieved using a bi-directional top hat D-scan at λ = 1.58 µm. The obtained values are then used to fit the theoretical equation, providing promising values in the mid-IR, where the nonlinear effects are no longer limited by two-photon absorption. New Ge-rich SiGe waveguide designs are provided to exploit the nonlinear properties in the mid-IR, showing a flat anomalous dispersion over one octave spanning from λ = 3 µm to λ = 8 µm and a γ parameter that decreases from γ = 10 W-1 m-1 .
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Dates et versions

hal-02362461 , version 1 (13-11-2019)

Identifiants

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Joan Manel Ramirez, Samuel Serna, Vladyslav Vakarin, Qiankun Liu, Jacopo Frigerio, et al.. Ge-rich SiGe waveguides for supercontinuum generation in the mid-IR. Silicon Photonics: from Fundamental Research to Manufacturing, SPIE proceedings, 10686, pp.106860P, 2018, Proceedings of SPIE, ⟨10.1117/12.2306873⟩. ⟨hal-02362461⟩
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