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Communication Dans Un Congrès Année : 2019

THz Driven Dynamics in Mott Insulator GaTa4Se8

Résumé

GaTa4Se8 is a Mott insulator known to exhibit an electric Mott transition, characterized by a drop in electrical resistivity, when an electric field larger than 1-10 kV/cm is applied for a few tens of microseconds using electrodes deposited on the sample. Here, we show that a resistivity drop can be induced in this material within less than a picosecond. These dynamics occur after excitation by a high field THz pump pulse and persist for a few picoseconds, well beyond the duration of the pump pulse.
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Dates et versions

hal-02358194 , version 1 (11-11-2019)

Identifiants

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Elsa Abreu, Danylo Babich, Etienne Janod, Sarah Houver, Benoît Corraze, et al.. THz Driven Dynamics in Mott Insulator GaTa4Se8. 2019 44th International Conference on Infrared, Millimeter, and Terahertz Waves (IRMMW-THz), Sep 2019, Paris, France. pp.1-2, ⟨10.1109/IRMMW-THz.2019.8874120⟩. ⟨hal-02358194⟩
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