THz Driven Dynamics in Mott Insulator GaTa4Se8
Résumé
GaTa4Se8 is a Mott insulator known to exhibit an electric Mott transition, characterized by a drop in electrical resistivity, when an electric field larger than 1-10 kV/cm is applied for a few tens of microseconds using electrodes deposited on the sample. Here, we show that a resistivity drop can be induced in this material within less than a picosecond. These dynamics occur after excitation by a high field THz pump pulse and persist for a few picoseconds, well beyond the duration of the pump pulse.
Fichier principal
Abreu et al. - 2019 - THz Driven Dynamics in Mott Insulator GaTa sub4.pdf (94.5 Ko)
Télécharger le fichier
Origine : Fichiers produits par l'(les) auteur(s)
Loading...