Demonstration of GaN-on-silicon material system operating up to 3 kilovolts with reduced trapping effects - Archive ouverte HAL Access content directly
Conference Papers Year :

Demonstration of GaN-on-silicon material system operating up to 3 kilovolts with reduced trapping effects

Abstract

We report on the first demonstration of low trapping effects up to 3000 V within GaN-on-silicon epitaxial layers using a local substrate removal (LSR) followed by a thick backside ultra-wide-bandgap AlN deposition. The fabricated AlGaN/GaN devices deliver low specific on-resistance below 10 mΩcm 2 together with unprecedented 3-terminal blocking voltage while substrate ramp measurements show reduced hysteresis up to 3000 V. These results pave the way for beyond 1200 V applications using large wafer diameter GaN-on-Si high electron mobility transistors.
Fichier principal
Vignette du fichier
2019_CS_MANTECH_Medjdoub_final.pdf (865.16 Ko) Télécharger le fichier
Origin : Files produced by the author(s)
Loading...

Dates and versions

hal-02356891 , version 1 (09-11-2019)

Identifiers

  • HAL Id : hal-02356891 , version 1

Cite

Riad Kabouche, Idriss Abid, Malek Zegaoui, Kai Cheng, F Medjdoub. Demonstration of GaN-on-silicon material system operating up to 3 kilovolts with reduced trapping effects. International Conference on Compound Semiconductor Manufacturing Technology, CS MANTECH 2019, Apr 2019, Minneapolis, United States. ⟨hal-02356891⟩
62 View
67 Download

Share

Gmail Facebook Twitter LinkedIn More