Scaling of AlN/GaN HEMT for millimeter-wave power applications - Archive ouverte HAL Accéder directement au contenu
Communication Dans Un Congrès Année : 2019

Scaling of AlN/GaN HEMT for millimeter-wave power applications

Résumé

In this paper, we report on AlN/GaN HEMTs for high frequency applications. Various gate lengths have been studied as a function of the gate-drain distance in order to analyze the impact on the DC, RF and power performances. Electrical characteristics of this structure for 110 nm gate length show a maximum drain current of 1.2 A/mm, an extrinsic transconductance Gm of 400 mS/mm and a FT/Fmax of 63/300 GHz at a drain bias voltage VDS = 20V. An excellent electron confinement with a low leakage current below 10 µA/mm is achieved. Furthermore, a breakdown voltage of 55 V for GD0.5 and up to 140 V for GD2.5 are observed when using a 110 nm short gate length. Large signal characteristics at 40 GHz reveal a state-of-the-art combination of power added efficiency (PAE) (50%) with an output power density (Pout) of 3.6 W/mm at VDS = 20 V in continuous wave mode (CW) and PAE of 50% associated with a Pout of 8.3 W/mm at 40V in pulsed mode. It can be noticed that the 110 nm gate length GD0.5 showed no degradation after semi-on robustness tests and large signal measurements up-to VDS = 20V.
Fichier principal
Vignette du fichier
papier wocsdice Kathia.pdf (577.36 Ko) Télécharger le fichier
Origine : Fichiers produits par l'(les) auteur(s)
Loading...

Dates et versions

hal-02356889 , version 1 (09-11-2019)

Identifiants

  • HAL Id : hal-02356889 , version 1

Citer

K. Harrouche, Riad Kabouche, Malek Zegaoui, F Medjdoub. Scaling of AlN/GaN HEMT for millimeter-wave power applications. 43rd Workshop on Compound Semiconductor Devices and Integrated Circuits, WOCSDICE 2019, Jun 2019, Cabourg, France. ⟨hal-02356889⟩
115 Consultations
127 Téléchargements

Partager

Gmail Facebook X LinkedIn More