GaN-on-Silicon buffer decomposition experiment: analysis of the vertical leakage current
Résumé
In this work an extensive analysis on the leakage current of three samples obtained by stopping the epitaxial growth of a GaN-on-Silicon stack is presented. We studied the current leakage behavior and the breakdown voltage as a function of the ambient temperature, as well as the trapping phenomena that lead to a hysteresis on a double-sweep measurement. We demonstrate that the leakage current through the AlN nucleation layer is mainly related to the conduction within defects and dislocation, while as the epitaxial layer become thicker the dislocation density drops as well as both the leakage current level and the device-to-device variability. Hysteresis measurements demonstrate that the trapping within the vertical stack depends on both the ambient temperature and the injected charge during the upward sweep. Moreover, we shown that the presence of a carbon doped layer cause positive charge to be trapped within the epitaxial layers.
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