Evidence of optically induced degradation in gallium nitride optoelectronic devices
Résumé
We provide experimental evidence that gallium-nitride-based optoelectronic devices can be affected by a photon-driven degradation mechanism unrelated to catastrophic optical damage. Any role of current in such degradation is excluded by stress tests under laser irradiation in the open-circuit configuration; any role of temperature is ruled out by additional thermal tests, showing a different degradation mode. Given the high bond strength of GaN, lattice-damage-related degradation is unlikely. A possible cause, supported by the PL spectra, is the dehydrogenation of gallium vacancies, which causes an increase in the number of optically active defects and requires a removal energy lower than the photon energy.
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APL 2018 Optically-induced degradation rev4.pdf (462.42 Ko)
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