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Article Dans Une Revue IEEE Microwave and Wireless Components Letters Année : 2002

Monolithic integrated circuits incorporating InP-based heterostructure barrier varactors

Résumé

Fully integrated monolithic circuits incorporating InP-based heterostructure barrier varactor (HBV) frequency multipliers have been fabricated via epitaxial liftoff and transfer-substrate techniques onto a quartz substrate. We have obtained a maximum output power of 6 mW at 288 GHz: corresponding to an overall efficiency of 6%. In addition, we have observed a 45-GHz, 3-dB bandwidth centered around 300 GHz for a constant input power of 70 mW.
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Dates et versions

hal-02347928 , version 1 (05-11-2019)

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T. David, S. Arscott, J.-M. Munier, Tahsin Akalin, Patrick Mounaix, et al.. Monolithic integrated circuits incorporating InP-based heterostructure barrier varactors. IEEE Microwave and Wireless Components Letters, 2002, 12 (8), pp.281-283. ⟨10.1109/LMWC.2002.801935⟩. ⟨hal-02347928⟩
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