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Article Dans Une Revue Physical Review Letters Année : 2012

Piezoresistance in Silicon at Uniaxial Compressive Stresses up to 3 GPa

J. Milne
  • Fonction : Auteur
I. Favorskiy
  • Fonction : Auteur
A. Rowe
Ch. Renner
  • Fonction : Auteur

Résumé

The room-temperature longitudinal piezoresistance of n-type and p-type crystalline silicon along selected crystal axes is investigated under uniaxial compressive stresses up to 3 GPa. While the conductance (G) of n-type silicon eventually saturates at ≈ 45% of its zero-stress value (G0) in accordance with the charge transfer model, in p-type material G/G0 increases above a predicted limit of ≈ 4.5 without any significant saturation, even at 3 GPa. Calculation of G/G0 using abinitio density functional theory reveals that neither G nor the mobility, when properly averaged over the hole distribution, saturate at stresses lower than 3 GPa. The lack of saturation has important consequences for strained silicon technologies.
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Dates et versions

hal-02345687 , version 1 (11-07-2022)

Identifiants

Citer

J. Milne, I. Favorskiy, A. Rowe, S. Arscott, Ch. Renner. Piezoresistance in Silicon at Uniaxial Compressive Stresses up to 3 GPa. Physical Review Letters, 2012, 108 (25), pp.256801-1-5. ⟨10.1103/PhysRevLett.108.256801⟩. ⟨hal-02345687⟩
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