Miniaturized Microcantilever-based RF Microwave Probes Using MEMS Technologies
Résumé
In this study, miniaturized microwave cantilever-based probes - using silicon-on-insulator (SOI) technology - are proposed for the on-chip electrical characterization of nanodevices. In contrast with conventional on-wafer probing structures, small pad dimensions around 1 μm2 associated with a 4.5 μm-pitch are demonstrated. The probe structure, designed in coplanar technology, is optimized in order to ensure a low contact resistance. The fabrication steps of the probe structures have been developed by means of microelectromechanical systems (MEMS) technology. Measurement performance up to 50 GHz exhibit return loss better than -15 dB and insertion loss lower than -2.5 dB.
Domaines
Sciences de l'ingénieur [physics]| Origine | Publication financée par une institution |
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