Selective dry etching of titanium nitride nanostructures with chlorine-based inductively coupled plasma - Archive ouverte HAL
Communication Dans Un Congrès Année : 2014

Selective dry etching of titanium nitride nanostructures with chlorine-based inductively coupled plasma

Fichier non déposé

Dates et versions

hal-02339986 , version 1 (30-10-2019)

Identifiants

  • HAL Id : hal-02339986 , version 1

Citer

Bruno Lee Sang, Marie-Josee Gour, Maxime Darnon, Serge Ecoffey, Abdelatif Jaouad, et al.. Selective dry etching of titanium nitride nanostructures with chlorine-based inductively coupled plasma. 40th Micro and Nano Engineering Conference, Sep 2014, Lausanne, Switzerland. ⟨hal-02339986⟩
46 Consultations
0 Téléchargements

Partager

More