Nonlinear noise modeling of a PHEMT device through residual phase noise and low frequency noise measurements - Archive ouverte HAL Accéder directement au contenu
Communication Dans Un Congrès Année : 2001

Nonlinear noise modeling of a PHEMT device through residual phase noise and low frequency noise measurements

Résumé

The phase noise generated by a FET device is investigated using transmission and reflection residual phase noise measurements. This approach helps in locating, in the intrinsic device, the low frequency noise sources which are responsible for these phase fluctuations. On the basis of these experiments, a new nonlinear noise model of the FET is proposed. This model is able to describe a phenomenon that has been observed, but never modeled in the past : the dependence of the baseband noise on the microwave input power.
Fichier principal
Vignette du fichier
Llopis_MTTS2001.PDF (125.67 Ko) Télécharger le fichier
Origine : Fichiers produits par l'(les) auteur(s)
Loading...

Dates et versions

hal-02335357 , version 1 (28-10-2019)

Identifiants

  • HAL Id : hal-02335357 , version 1

Citer

Olivier Llopis, J B Juraver, B. Tamen, Francois Danneville, M. Chaubet, et al.. Nonlinear noise modeling of a PHEMT device through residual phase noise and low frequency noise measurements. IEEE International Microwave Symposium, May 2001, Phoenix, United States. pp.831-834. ⟨hal-02335357⟩
35 Consultations
81 Téléchargements

Partager

Gmail Facebook X LinkedIn More