SiOxNy:B layers for ex-situ doping of hole-selective poly silicon contacts: A passivation study
Résumé
Passivating the contacts of crystalline silicon (c-Si) solar cells with a polycrystalline silicon layer (poly-Si) on a thin oxide (SiOx) film allows to decrease the recombination current at the metal/c-Si interface. In this study, an ex-situ doping method of poly-Si is proposed, involving a SiOxNy:B layer as a dopant source. In this study, we compare the properties (crystallinity of the deposited layer, doping profile and surface passivation properties) of the resulting ex-situ doped poly-Si(B) layer with our in-situ doped reference.
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