Defect Proliferation at the Quasicondensate Crossover of Two-Dimensional Dipolar Excitons Trapped in Coupled GaAs Quantum Wells - Archive ouverte HAL Access content directly
Journal Articles Physical Review Letters Year : 2019

Defect Proliferation at the Quasicondensate Crossover of Two-Dimensional Dipolar Excitons Trapped in Coupled GaAs Quantum Wells

Abstract

We study ultra-cold dipolar excitons confined in a 10$\mu$m trap of a double GaAs quantum well. Based on the local density approximation, we unveil for the first time the equation of state of excitons at pure thermodynamic equilibrium. In this regime we show that, below a critical temperature of about $1$ Kelvin, a superfluid forms in the inner region of the trap at a local exciton density $n \sim 2-3 \, 10^{10} \text{cm}^{-2}$, encircled by a more dilute and normal component in the outer rim of the trap. Remarkably, this spatial arrangement correlates directly with the concentration of defects in the exciton density which exhibits a sudden decrease at the onset of superfluidity, thus pointing towards an underlying Berezinskii-Kosterlitz-Thouless mechanism.

Dates and versions

hal-02325689 , version 1 (22-10-2019)

Identifiers

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Suzanne Dang, Romain Anankine, Carmen Gomez, Aristide Lemaître, Markus Holzmann, et al.. Defect Proliferation at the Quasicondensate Crossover of Two-Dimensional Dipolar Excitons Trapped in Coupled GaAs Quantum Wells. Physical Review Letters, 2019, 122 (11), ⟨10.1103/PhysRevLett.122.117402⟩. ⟨hal-02325689⟩
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