Novel Scalable Transfer Approach for Discrete III‐Nitride Devices Using Wafer‐Scale Patterned h‐BN/Sapphire Substrate for Pick‐and‐Place Applications (Adv. Mater. Technol. 10/2019) - Archive ouverte HAL Accéder directement au contenu
Article Dans Une Revue Advanced Materials Technologies Année : 2019

Novel Scalable Transfer Approach for Discrete III‐Nitride Devices Using Wafer‐Scale Patterned h‐BN/Sapphire Substrate for Pick‐and‐Place Applications (Adv. Mater. Technol. 10/2019)

Résumé

In article number 1900164 by Abdallah Ougazzaden and co‐workers, III‐Nitride based LEDs have been locally grown on h‐BN and fabricated at a wafer‐scale. This enables a simple and a dicing‐free pick‐and‐place of the devices on a flexible substrate without performance degradation.

Domaines

Matériaux

Dates et versions

hal-02321646 , version 1 (21-10-2019)

Identifiants

Citer

Taha Ayari, Suresh Sundaram, Chris Bishop, Adama Mballo, Phuong Vuong, et al.. Novel Scalable Transfer Approach for Discrete III‐Nitride Devices Using Wafer‐Scale Patterned h‐BN/Sapphire Substrate for Pick‐and‐Place Applications (Adv. Mater. Technol. 10/2019). Advanced Materials Technologies, 2019, 4 (10), pp.1970057. ⟨10.1002/admt.201970057⟩. ⟨hal-02321646⟩
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