Innovative OxRAMnanomemories with indium oxide nanocrystals fabricated by ultra low energy ionimplantation - Archive ouverte HAL
Communication Dans Un Congrès Année : 2017
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hal-02320610 , version 1 (18-10-2019)

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  • HAL Id : hal-02320610 , version 1

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G Ben Assayag, Caroline Bonafos, B Pecassou, D. Drouin, S. Ecoffey, et al.. Innovative OxRAMnanomemories with indium oxide nanocrystals fabricated by ultra low energy ionimplantation. European Materials Research Society Spring Meeting, E-MRS, May 2017, Strsbourg, France. ⟨hal-02320610⟩
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