Conductivity of Manganite Films under the Action of Tension Caused by the Deformation of Substrate - Archive ouverte HAL
Article Dans Une Revue Physics of the Solid State Année : 2019

Conductivity of Manganite Films under the Action of Tension Caused by the Deformation of Substrate

Résumé

The electron transport properties of strained thin La 0.7 Ba 0.3 MnO 3 (LBMO) epitaxial films are studied. Films 40-100 nm in thickness were prepared by laser ablation at a temperature T = 700-800°C in pure oxygen atmosphere of 0.3-1 mBar. Ferroelectric crystal substrates (011)0.79PbMg 1/3 Nb 2/3 O 3-0.21PbTiO 3 (PMN-PT) with a Curie temperature of 150°C and high piezoelectric constants were used to create a mechanical stress. The ferroelectric polarization and piezoelectric effects on the electrical parameters of LBMO films are studied.
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Dates et versions

hal-02318290 , version 1 (11-10-2020)

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G. Ovsyannikov, T. Shaikhulov, V. Shakhunov, A. Klimov, V. Preobrazhenskii, et al.. Conductivity of Manganite Films under the Action of Tension Caused by the Deformation of Substrate. Physics of the Solid State, 2019, 61 (9), pp.1665-1669. ⟨10.1134/S1063783419090208⟩. ⟨hal-02318290⟩
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