InAs quantum dot in a needlelike tapered InP nanowire: a telecom band single photon source monolithically grown on silicon - Archive ouverte HAL Accéder directement au contenu
Article Dans Une Revue Nanoscale Année : 2019

InAs quantum dot in a needlelike tapered InP nanowire: a telecom band single photon source monolithically grown on silicon

Walid Redjem
  • Fonction : Auteur
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Hai Son Nguyen
Sébastien Cueff
Xavier Letartre
Emmanuel Rousseau
Guillaume Cassabois
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  • PersonId : 1002524
Michel Gendry
Nicolas Chauvin

Résumé

Realizing single photon sources emitting in the telecom band on silicon substrates is essential to reach complementary-metal-oxide-semiconductor (CMOS) compatible devices that secure communications over long distances. In this work, we propose the monolithic growth of needlelike tapered InAs/InP quantum dot-nanowires (QD-NWs) on silicon substrates with a small taper angle and a nanowire diameter tailored to support a single mode waveguide. Such a NW geometry is obtained by a controlled balance over axial and radial growths during the gold-catalyzed growth of the NWs by molecular beam epitaxy. This allows us to investigate the impact of the taper angle on the emission properties of a single InAs/InP QD-NW. At room temperature, a Gaussian far-field emission profile in the telecom O-band with a beam divergence angle θ = 30° is demonstrated from a single InAs QD embedded in a 2° tapered InP NW. Moreover, single photon emission is observed at cryogenic temperature for an off-resonant excitation and the best result, g2(0) = 0.05, is obtained for a 7° tapered NW. This all-encompassing study paves the way for the monolithic growth on silicon of an efficient single photon source in the telecom band based on InAs/InP QD-NWs.

Dates et versions

hal-02317732 , version 1 (16-10-2019)

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Citer

Ali Jaffal, Walid Redjem, Philippe Regreny, Hai Son Nguyen, Sébastien Cueff, et al.. InAs quantum dot in a needlelike tapered InP nanowire: a telecom band single photon source monolithically grown on silicon. Nanoscale, 2019, 11, pp.21847-21855. ⟨10.1039/C9NR06114B⟩. ⟨hal-02317732⟩
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