Thermal analysis of ultimately-thinned-and-transfer-bonded CMOS on mechanically flexible foils
Justine Philippe
(1)
,
Arun Bhaskar
(1)
,
Etienne Okada
(1, 2)
,
Flavie Braud
(1, 3)
,
J.F. Robillard
(1, 4)
,
Francois Danneville
(1, 5)
,
Christine Raynaud
(6)
,
Daniel Gloria
(7)
,
Emmanuel Dubois
(1, 4)
1
IEMN -
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520
2 PCMP - IEMN - Plateforme de Caractérisation Multi-Physiques - IEMN
3 CMNF - IEMN - Centrale de Micro Nano Fabrication - IEMN
4 MICROELEC SI - IEMN - Microélectronique Silicium - IEMN
5 ANODE - IEMN - Advanced NanOmeter DEvices - IEMN
6 CEA-LETI - Commissariat à l'énergie atomique et aux énergies alternatives - Laboratoire d'Electronique et de Technologie de l'Information
7 STMicroelectronics
2 PCMP - IEMN - Plateforme de Caractérisation Multi-Physiques - IEMN
3 CMNF - IEMN - Centrale de Micro Nano Fabrication - IEMN
4 MICROELEC SI - IEMN - Microélectronique Silicium - IEMN
5 ANODE - IEMN - Advanced NanOmeter DEvices - IEMN
6 CEA-LETI - Commissariat à l'énergie atomique et aux énergies alternatives - Laboratoire d'Electronique et de Technologie de l'Information
7 STMicroelectronics
Justine Philippe
- Fonction : Auteur
- PersonId : 748512
- IdHAL : justine-philippe
- ORCID : 0000-0001-7466-8327
Etienne Okada
- Fonction : Auteur
- PersonId : 745489
- IdHAL : etienne-okada
Flavie Braud
- Fonction : Auteur
- PersonId : 746842
- IdHAL : flavie-braud
- ORCID : 0000-0001-8807-6007
J.F. Robillard
- Fonction : Auteur
- PersonId : 747199
- IdHAL : jean-francois-robillard
- ORCID : 0000-0002-7170-7535
- IdRef : 132947110
Francois Danneville
- Fonction : Auteur
- PersonId : 747124
- IdHAL : francois-danneville
- ORCID : 0000-0002-4725-0010
Christine Raynaud
- Fonction : Auteur
- PersonId : 1205254
Emmanuel Dubois
- Fonction : Auteur
- PersonId : 738944
- IdHAL : emmanuel-dubois-iemn
- ORCID : 0000-0002-0347-010X
- IdRef : 134290291
Résumé
Thinned CMOS chips transfer-bonded onto a compliant host substrate remain to date the technology of choice for applications requiring both mechanical flexibility and high frequency operation. However, the use of poorly thermally conductive host substrates raises the problem of thermal management of flexible electronics, a topic poorly addressed in literature. In this letter, we report the analysis of flexible SOI-CMOS chips ultimately-thinned-and-transfer-bonded (UTTB) onto polyimide and copper substrates. While the temperature remains limited to ∼68 • C on the native silicon substrate or after transfer onto a copper host substrate, infrared thermography reveals temperature peaks of up to 118 • C on polyimide. The impact of self-heating in flexible SOI-CMOS is correlated with electrical performance for the three types of substrates. Beyond the property of mechanical flexibility it provides, a copper substrate is shown to slightly strengthen electrostatic integrity while maintaining a thermal landscape close to that of silicon.
Format du dépôt | Fichier |
---|---|
Type de dépôt | Article dans une revue |
Résumé |
en
Thinned CMOS chips transfer-bonded onto a compliant host substrate remain to date the technology of choice for applications requiring both mechanical flexibility and high frequency operation. However, the use of poorly thermally conductive host substrates raises the problem of thermal management of flexible electronics, a topic poorly addressed in literature. In this letter, we report the analysis of flexible SOI-CMOS chips ultimately-thinned-and-transfer-bonded (UTTB) onto polyimide and copper substrates. While the temperature remains limited to ∼68 • C on the native silicon substrate or after transfer onto a copper host substrate, infrared thermography reveals temperature peaks of up to 118 • C on polyimide. The impact of self-heating in flexible SOI-CMOS is correlated with electrical performance for the three types of substrates. Beyond the property of mechanical flexibility it provides, a copper substrate is shown to slightly strengthen electrostatic integrity while maintaining a thermal landscape close to that of silicon.
|
Titre |
en
Thermal analysis of ultimately-thinned-and-transfer-bonded CMOS on mechanically flexible foils
|
Auteur(s) |
Justine Philippe
1
, Arun Bhaskar
1
, Etienne Okada
1, 2
, Flavie Braud
1, 3
, J.F. Robillard
1, 4
, Francois Danneville
1, 5
, Christine Raynaud
6
, Daniel Gloria
7
, Emmanuel Dubois
1, 4
1
IEMN -
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520
( 1296 )
- [Univ. Lille, CNRS, Ecole Centrale Lille, Yncréa-ISEN, UVHC] ––
Laboratoire Central – Cité Scientifique – Avenue Poincaré – CS 60069 – 59652 VILLENEUVE D’ASCQ CEDEX
- France
2
PCMP - IEMN -
Plateforme de Caractérisation Multi-Physiques - IEMN
( 1067502 )
- France
3
CMNF - IEMN -
Centrale de Micro Nano Fabrication - IEMN
( 1067417 )
- Plateforme: Centrale de Micro Nano Fabrication CMNF - IEMN UMR8520 -
Membre du réseau RENATECH des grandes centrales de Micro Nano Fabrication
- France
4
MICROELEC SI - IEMN -
Microélectronique Silicium - IEMN
( 1067493 )
- Groupe Microélectronique Silicium - IEMN UMR8520
- France
5
ANODE - IEMN -
Advanced NanOmeter DEvices - IEMN
( 1067381 )
- Groupe ANODE (Composants et dispositifs nanométriques)
- France
6
CEA-LETI -
Commissariat à l'énergie atomique et aux énergies alternatives - Laboratoire d'Electronique et de Technologie de l'Information
( 40214 )
- MINATEC 17, rue des Martyrs, 38054, Grenoble Cedex 9
- France
7
STMicroelectronics
( 300430 )
- France
|
Nom de la revue |
|
Langue du document |
Anglais
|
Vulgarisation |
Non
|
Comité de lecture |
Oui
|
Audience |
Internationale
|
Volume |
7
|
Page/Identifiant |
973-978
|
Date de publication |
2019-09-06
|
Projet(s) ANR |
|
Domaine(s) |
|
Collaboration/Projet |
|
Mots-clés |
en
CMOS, SOI, thin film, flexible electronics, thermal management
|
DOI | 10.1109/JEDS.2019.2939884 |
UT key WOS | 000495118900011 |
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