A lightweight write-assist scheme for reduced RRAM variability and power - Archive ouverte HAL Accéder directement au contenu
Article Dans Une Revue Microelectronics Reliability Année : 2018

A lightweight write-assist scheme for reduced RRAM variability and power

Résumé

Common problems with Oxide-based Resistive RAM are related to high variability in operating conditions and high programming currents during FORMING, SET and RESET operations. Although research has taken steps to resolve these issues, variability combined with high programming currents remains an important characteristic for RRAMs. In a conventional write scheme with fixed duration and amplitude, the programming current is not controlled, which degrades the cell performance (power consumption and variability) due to over-programming. In this paper, a self-adaptive write driver is proposed to control the write current. A feedback mechanism based on current comparison is used to switch off the write stimulus as soon as the preferred write current is reached. Compared to conventional write schemes, in the proposed write-assist circuit, the write energy per bit is reduced by 27% and the standard deviation of post-FORMING distributions is reduced by 57%.
Fichier principal
Vignette du fichier
ESREF_2018_postREVIEW.pdf (483.15 Ko) Télécharger le fichier
Origine Fichiers produits par l'(les) auteur(s)
Loading...

Dates et versions

hal-02314650 , version 1 (13-10-2019)

Identifiants

Citer

Hassen Aziza, B. Hajri, M. Mansour, A. Chehab, A. Annie Perez. A lightweight write-assist scheme for reduced RRAM variability and power. Microelectronics Reliability, 2018, 88-90, pp.6-10. ⟨10.1016/j.microrel.2018.07.065⟩. ⟨hal-02314650⟩
73 Consultations
175 Téléchargements

Altmetric

Partager

Gmail Mastodon Facebook X LinkedIn More