Memristor Device Characterization by Scanning Microwave Microscopy

We report memristive device characterization using near-field scanning microwave microscopy. Atomic force microscopy, magnitude and phase-shift images of the complex reflection coefficient of TiO2 devices can be acquired simultaneously in the range 1-20 GHz. In particular, measurement of the complex reflection coefficient of a 200 by 200 nm 2 TiO2 device is exemplary demonstrated. These results are beneficial for electrical modeling and optimization of memristor devices to address OxRAM applications.

Domaines

Sciences de l'ingénieur [physics] Micro et nanotechnologies/Microélectronique

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K_Haddadi_MARSS 2017_v2.pdf (3.83 Mo)

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https://hal.science/hal-02311382

Soumis le : lundi 14 octobre 2019-22:41:37

Dernière modification le : mardi 3 septembre 2024-11:16:05

Dates et versions

hal-02311382 , version 1 (10-10-2019)

hal-02311382 , version 2 (14-10-2019)

Identifiants

HAL Id : hal-02311382 , version 2
DOI : 10.1109/MARSS.2017.8016537

Citer

Gilbert Sassine, N. Najjari, Charlene Brillard, N. Defrance, Olaf C Haenssler, et al.. Memristor Device Characterization by Scanning Microwave Microscopy. International Conference on Manipulation, Automation and Robotics at Small Scales (MARSS), Jul 2017, Montréal, Canada. ⟨10.1109/MARSS.2017.8016537⟩. ⟨hal-02311382v2⟩

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