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Communication Dans Un Congrès Année : 2017

A Source and Drain Transient Currents Technique for Trap Characterisation in AlGaN/GaN Based Devices

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hal-02310067 , version 1 (09-10-2019)

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  • HAL Id : hal-02310067 , version 1

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Steven Duffy, Brahim Benbakhti, Wei Zhang, Karol Kalna, Khaled Ahmeda, et al.. A Source and Drain Transient Currents Technique for Trap Characterisation in AlGaN/GaN Based Devices. 47th European Solid-State Device Research Conference (ESSDERC), Sep 2017, Leuven, Belgium. ⟨hal-02310067⟩
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