Analysis and Assessment of temperature effect of an Open LoopActive Gate Voltage Control in GaN Transistor During Turn-ON and Turn-OFF - Archive ouverte HAL
Communication Dans Un Congrès Année : 2019

Analysis and Assessment of temperature effect of an Open LoopActive Gate Voltage Control in GaN Transistor During Turn-ON and Turn-OFF

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Sciences de l'ingénieur [physics]

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https://hal.science/hal-02310021

Soumis le : mercredi 9 octobre 2019-17:51:31

Dernière modification le : lundi 3 juin 2024-12:16:26

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hal-02310021 , version 1 (09-10-2019)

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  • HAL Id : hal-02310021 , version 1

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Mamadou Lamine Beye, Jean-Fraçois Mogniotte, Luong-Viet Phung, Nadir Idir, Hassan Maher, et al.. Analysis and Assessment of temperature effect of an Open LoopActive Gate Voltage Control in GaN Transistor During Turn-ON and Turn-OFF. 13th IEEE PEDS, Jul 2019, Toulouse, France. ⟨hal-02310021⟩

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