(Ga,In)N/GaN light emitting diodes with a tunnel junction and a rough n-contact layer grown by metalorganic chemical vapor deposition - Archive ouverte HAL Access content directly
Journal Articles AIP Advances Year : 2019

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hal-02304933 , version 1 (03-10-2019)

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V. Fan Arcara, B. Damilano, G. Feuillet, A. Courville, S. Chenot, et al.. (Ga,In)N/GaN light emitting diodes with a tunnel junction and a rough n-contact layer grown by metalorganic chemical vapor deposition. AIP Advances, 2019, 9 (5), pp.055101. ⟨10.1063/1.5092693⟩. ⟨hal-02304933⟩
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