Optical and Thermal Performances of (Ga,In)N/GaN Light Emitting Diodes Transferred on a Flexible Tape - Archive ouverte HAL Access content directly
Journal Articles IEEE Photonics Technology Letters Year : 2018

Optical and Thermal Performances of (Ga,In)N/GaN Light Emitting Diodes Transferred on a Flexible Tape

Abel Ebongue
  • Function : Author
  • PersonId : 1103219

Abstract

Blue (Ga,In)N-based light-emitting diodes (LEDs) grown on a Si(111) substrate by metal-organic vapor phase epitaxy are transferred on a flexible tape after the Si substrate removal. Their optical and thermal behaviors are measured and compared to those of regular LEDs on Si. The light output power of the flexible LEDs is increased due to a higher light extraction efficiency related to the removal of the absorbing Si substrate. However, the maximum output power is limited by thermal effects due to the lower thermal conductivity of the flexible tape. Monitoring the electroluminescence wavelength of the flexible LEDs allows determining their acceptable operating range. The maximum flexible LED luminance is 5×10 5 cd/m 2 .
Fichier principal
Vignette du fichier
Damilano2018_IEEE_PTL.pdf (677.56 Ko) Télécharger le fichier
Origin Files produced by the author(s)

Dates and versions

hal-02304909 , version 1 (10-09-2021)

Identifiers

Cite

B. Damilano, Marie Lesecq, Di Zhou, Éric Frayssinet, Sebastien Chenot, et al.. Optical and Thermal Performances of (Ga,In)N/GaN Light Emitting Diodes Transferred on a Flexible Tape. IEEE Photonics Technology Letters, 2018, 30 (17), pp.1567-1570. ⟨10.1109/LPT.2018.2858000⟩. ⟨hal-02304909⟩
125 View
91 Download

Altmetric

Share

Gmail Mastodon Facebook X LinkedIn More