TiOx, TiNy and TiOxNy thin films were deposited by reactive sputtering. The reactive gas pulsing process was implemented to tune the chemical composition and consequently, the characteristics of the films. For TiOx coatings, oxygen concentration was progressively modified from pure titanium to TiO2 compound. Similarly, a gradual decrease of the deposition rate and a controlled modulation of the chemical composition of TiNy films (y between 0 and 1.05) were easily reached. A reverse evolution of the oxygen and nitrogen contents was produced in TiOxNy films, which was correlated with the smooth transition from metallic to semiconducting behaviours.