Optimization of ohmic contact and adhesion on polysilicon in MEMS–NEMS wet etching process - Archive ouverte HAL Access content directly
Journal Articles Microelectronic Engineering Year : 2011

Optimization of ohmic contact and adhesion on polysilicon in MEMS–NEMS wet etching process

Abstract

This paper presents the optimization of polysilicon doping and metallization to form ohmic contact with etching resistance. Indeed, polysilicon doped by ion implantation and ohmic contacts are an important and interesting part of integrated circuit technology or MEMS and NEMS. LPCVD-polysilicon doping parameters, such as ion energy, dose, and annealing were investigated. In particular a superficial implantation realized after a deep implantation enables one to slightly decrease the polysilicon resistivity while the contact resistance is reduced. And ohmic contacts with wet etching resistance were realized by depositing the different metallization stacks. We demonstrate that ohmic contact pad Cr/Pt/Au has provided a good adhesion on LPCVD-polysilicon after wet etching.

Dates and versions

hal-02300269 , version 1 (29-09-2019)

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Etienne Herth, Emmanuelle Algré, Bernard Legrand, Lionel Buchaillot. Optimization of ohmic contact and adhesion on polysilicon in MEMS–NEMS wet etching process. Microelectronic Engineering, 2011, 88 (5), pp.724-728. ⟨10.1016/j.mee.2010.06.032⟩. ⟨hal-02300269⟩
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