Degree of polarization of the photo-luminescence and cathodo-luminescence for plasma etched InP and GaAs under control of the built-in mechanical stress in SiNx mask layer - Archive ouverte HAL
Communication Dans Un Congrès Année : 2019

Degree of polarization of the photo-luminescence and cathodo-luminescence for plasma etched InP and GaAs under control of the built-in mechanical stress in SiNx mask layer

Domaines

Science des matériaux [cond-mat.mtrl-sci] Optique [physics.optics] Optique / photonique

Christophe Levallois  : Connectez-vous pour contacter le contributeur

https://hal.science/hal-02291428

Soumis le : mercredi 18 septembre 2019-17:18:59

Dernière modification le : mardi 17 septembre 2024-10:16:17

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hal-02291428 , version 1 (18-09-2019)

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  • HAL Id : hal-02291428 , version 1

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Solène Gérard, Merwan Mokhtari, Jean-Pierre Landesman, Christophe Levallois, Marc Fouchier, et al.. Degree of polarization of the photo-luminescence and cathodo-luminescence for plasma etched InP and GaAs under control of the built-in mechanical stress in SiNx mask layer. 18th International Conference on Defects-Recognition, Imaging and Physics in Semiconductors (DRIP XVIII), Sep 2019, Berlin, Germany. ⟨hal-02291428⟩

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CEA UNIV-RENNES1 UGA CNRS INSA-RENNES FOTON FOTON-INSA OSUR LTM PLASMA_ETCHING IPR FOTON_OHM IPR-MN DRT UR1-UFR-SPM UR1-MATH-STIC CEA-DRF LETI UNIV-RENNES INSA-GROUPE CEA-GRE UR1-MATH-NUM UR1-MMS
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