DOP characterization of oxide-confined GaAs based VCSEL operating at 850 nm - Archive ouverte HAL
Communication Dans Un Congrès Année : 2018
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hal-02290642 , version 1 (17-09-2019)

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  • HAL Id : hal-02290642 , version 1

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Merwan Mokhtari, Philippe Pagnod-Rossiaux, Francois Laruelle, Jean-Pierre Landesman, Christophe Levallois, et al.. DOP characterization of oxide-confined GaAs based VCSEL operating at 850 nm. 11th European Workshop on VCSELs (VCSEL Day 2018), Apr 2018, Ulm, Germany. ⟨hal-02290642⟩
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