Large Periphery GaN HEMTs Modeling Using Distributed Gate Resistance - Archive ouverte HAL
Article Dans Une Revue Physica Status Solidi A (applications and materials science) Année : 2018

Large Periphery GaN HEMTs Modeling Using Distributed Gate Resistance

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hal-02273403 , version 1 (28-08-2019)

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Bilal Hassan, Adrien Cutivet, Meriem Bouchilaoun, Christophe Rodriguez, Ali Soltani, et al.. Large Periphery GaN HEMTs Modeling Using Distributed Gate Resistance. Physica Status Solidi A (applications and materials science), 2018, pp.1800505. ⟨10.1002/pssa.201800505⟩. ⟨hal-02273403⟩
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