Thermal Transient Extraction for GaN HEMTs by Frequency-Resolved Gate Resistance Thermometry with Sub-100 ns Time Resolution - Archive ouverte HAL Access content directly
Journal Articles physica status solidi (a) Year : 2019

Thermal Transient Extraction for GaN HEMTs by Frequency-Resolved Gate Resistance Thermometry with Sub-100 ns Time Resolution

Dates and versions

hal-02273385 , version 1 (28-08-2019)

Identifiers

Cite

Adrien Cutivet, Meriem Bouchilaoun, Bilal Hassan, Christophe Rodriguez, Ali Soltani, et al.. Thermal Transient Extraction for GaN HEMTs by Frequency-Resolved Gate Resistance Thermometry with Sub-100 ns Time Resolution. physica status solidi (a), 2019, 216, pp.1800503. ⟨10.1002/pssa.201800503⟩. ⟨hal-02273385⟩
23 View
0 Download

Altmetric

Share

Gmail Facebook X LinkedIn More