Structural and dielectric properties of ferroelectric poly(vinylidene fluoride-trifluoroethylene) thin films with different bottom electrodes
Résumé
In this work we studied 90 nm thick copolymer thin films of vinylidene fluoride (70%) with trifluoroethylene (30%) grown by Langmuir-Blodgett onto silicon substrates. The effects of two different bottom electrodes, namely, Al and LaNiO3 (LNO) are investigated. A Debye-like relaxation near 320 K is enlarged by LNO bottom electrode. X-ray diffraction pattern attests that two different crystallographic structures coexist below 340 K in film deposited on LNO. Compared with Al electrode, LNO electrode strongly increases defects or gauche segments in film and further weakens properties of film. © 2009 American Institute of Physics.
Mots clés
Aluminum
Dielectric materials
Dielectric properties of solids
Electrodes
Ferroelectric films
Fluorine compounds
Langmuir Blodgett films
Lanthanum compounds
Nickel compounds
Thin film transistors
X ray diffraction
Copolymer thin films
Crystallographic structure
Debye-like relaxation
Langmuir-blodgett
Poly(vinylidene fluoride-trifluoroethylene)
Silicon substrates
Trifluoroethylene
Vinylidene fluoride
Thin films