The first InGaN-based LDs were reported in 1996 by Nakamura and co-workers [1] and commercialized from 1999 by the Nichia Corporation. Since then, huge efforts have been devoted to the optimization of the epitaxial layers (doping, defect concentration, shortening of the radiative lifetime, etc.). Nowadays, blue laser diodes emitting hundreds of mW are commercially available but they often exhibit multimode behaviors for both transverse and longitudinal directions. The InGaN-based laser diode technology is still in its infancy, compared to its long wavelength counterparts and only recently the first electrically pumped single mode blue laser diodes have been demonstrated [2] with a resolution limited linewidth of 11.7 GHz. At telecom wavelengths, a mature approach to force the laser diode in a single frequency regime consists in using an external feedback by means of Fiber Bragg Grating [3,4]. Nevertheless, to our knowledge, such a compact design has not been proposed for blue laser diodes yet.