Combined experimental and computational study of the recrystallization process induced by electronic interactions of swift heavy ions with silicon carbide crystals - Archive ouverte HAL Accéder directement au contenu
Article Dans Une Revue Physical Review B: Condensed Matter and Materials Physics (1998-2015) Année : 2012

Combined experimental and computational study of the recrystallization process induced by electronic interactions of swift heavy ions with silicon carbide crystals

Résumé

The healing effect of intense electronic energy deposition arising during swift heavy ion (SHI) irradiation is demonstrated in the case of 3C-SiC damaged by nuclear energy deposition. Experimental (ion channeling experiments) and computational (molecular dynamics simulations) studies provide consistent indications of disorder decrease after SHI irradiation. Furthermore, both methods establish that SHI-induced recrystallization takes place at amorphous-crystalline interfaces. The recovery process is unambiguously accounted for by the thermal spike phenomenon.
Fichier principal
Vignette du fichier
SHIBIEC_SiC_PRB-RC_A-Debelle.pdf (718.96 Ko) Télécharger le fichier
Origine : Fichiers produits par l'(les) auteur(s)
Loading...

Dates et versions

hal-02193726 , version 1 (24-07-2019)

Identifiants

Citer

A. Debelle, M. Backman, L. Thome, W. Weber, M. Toulemonde, et al.. Combined experimental and computational study of the recrystallization process induced by electronic interactions of swift heavy ions with silicon carbide crystals. Physical Review B: Condensed Matter and Materials Physics (1998-2015), 2012, 86 (10), ⟨10.1103/PhysRevB.86.100102⟩. ⟨hal-02193726⟩
104 Consultations
165 Téléchargements

Altmetric

Partager

Gmail Facebook X LinkedIn More