Depth-dependent phase change in Gd2O3 epitaxial layers under ion irradiation
Résumé
Epitaxial Gd2O3 thin layers with the cubic structure were irradiated with 4-MeV Au 2+ ions in the 10 13-10 15 cm-2 fluence range. X-ray diffraction indicates that ion irradiation induces a cubic to monoclinic phase change. Strikingly, although the energy-deposition profile of the Au 2+ ions is constant over the layer thickness, this phase transformation is depth-dependent, as revealed by a combined X-ray diffraction and ion channeling analysis. In fact, the transition initiates very close to the surface and propagates inwards, which can be explained by an assisted migration process of irradiation-induced defects. This result is promising for developing a method to control the thickness of the rare-earth oxide crystalline phases.
Domaines
Matériaux| Origine | Fichiers produits par l'(les) auteur(s) |
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